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	SOI wafer achieved by smart-cut process
	Li, Yingxue ; Zhang, Zhikuan ; Ni, Weihua ; Zhang, Xing ; Wang, Yangyuan
	1998
关键词	INSULATOR MATERIAL TECHNOLOGY SILICON
英文摘要	Smart-Cut progress is an alternative route to those former silicon on insulator(SOI)material technologies such as SIMOX (separation by implanted oxygen) and BESOI(bonded and etch back SOI). It is based on proton implantation and wafer bonding associated with a temperature treatment which induces a in-depth splitting of the implanted wafer. In this paper, basic mechanisms of bonding and the splitting are discussed. Finally the characteristics elf the final structure are presented.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000080928800205&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Materials Science, Characterization & Testing; Materials Science, Coatings & Films; Optics; CPCI-S(ISTP); 0
语种	英语
DOI标识	10.1109/ICSICT.1998.786123
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/294013]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Li, Yingxue,Zhang, Zhikuan,Ni, Weihua,et al. SOI wafer achieved by smart-cut process. 1998-01-01.

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