SOI wafer achieved by smart-cut process | |
Li, Yingxue ; Zhang, Zhikuan ; Ni, Weihua ; Zhang, Xing ; Wang, Yangyuan | |
1998 | |
关键词 | INSULATOR MATERIAL TECHNOLOGY SILICON |
英文摘要 | Smart-Cut progress is an alternative route to those former silicon on insulator(SOI)material technologies such as SIMOX (separation by implanted oxygen) and BESOI(bonded and etch back SOI). It is based on proton implantation and wafer bonding associated with a temperature treatment which induces a in-depth splitting of the implanted wafer. In this paper, basic mechanisms of bonding and the splitting are discussed. Finally the characteristics elf the final structure are presented.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000080928800205&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Materials Science, Characterization & Testing; Materials Science, Coatings & Films; Optics; CPCI-S(ISTP); 0 |
语种 | 英语 |
DOI标识 | 10.1109/ICSICT.1998.786123 |
内容类型 | 其他 |
源URL | [http://ir.pku.edu.cn/handle/20.500.11897/294013] ![]() |
专题 | 信息科学技术学院 |
推荐引用方式 GB/T 7714 | Li, Yingxue,Zhang, Zhikuan,Ni, Weihua,et al. SOI wafer achieved by smart-cut process. 1998-01-01. |
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