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	A new physical I-V model of deep-submicron FD SOI MOSFETs for analogue digital circuit simulation
	Xi, XM ; Wang, HM ; Zhang, X ; Wang, YY
	1998
关键词	THRESHOLD VOLTAGE DEVICE
英文摘要	A new analytical current model in strong inversion operation region for fully depleted SOI/MOSFET with channel lengths down to deep submicrometer range is developed with only one single expression for both linear and saturation region without using smoothing function. The convergence when employed in circuit simulators will be improved. Measurements on devices of varied geometry show good agreement with model predictions.; Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Materials Science, Characterization & Testing; Materials Science, Coatings & Films; Optics; CPCI-S(ISTP); 0
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/294008]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Xi, XM,Wang, HM,Zhang, X,et al. A new physical I-V model of deep-submicron FD SOI MOSFETs for analogue digital circuit simulation. 1998-01-01.

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