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	Study to the integrated micro piezoresistive accelerometer for high-g application with amplifying circuit
	Shi, JJ ; Zhang, W ; Hao, YL ; Zeng, ZJ
	2004
关键词	MEMS accelerometer crystal silicon piezoresistive
英文摘要	The paper presents the design, fabrication and test of a MEMS accelerometer for high g application, we adopt crystal silicon as the base for the sensor, which on one hand can help us to explore the anti-overload ability and piezoresistive characteristics of the silicon, on the other hand can also help us to achieve our goal to the pure integrated MEMS sensor with circuit on the same silicon wafer base. Continuously we present an alternative way to achieve the integrity between the sensor cells and the circuit, a two-grade amplifying circuit is designed for the sensor to achieve 75X amplifying of the output signal of the sensor during the test procession. To the accelerometer we designed, in conclusion, the results show that it has the sensitivity of 450 similar to 600 nV/g in the test range of 50000g. high anti-overload ability beyond 150000g, high yield(> 90%).; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000227342202055&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Physics, Condensed Matter; CPCI-S(ISTP); 0
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/293773]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Shi, JJ,Zhang, W,Hao, YL,et al. Study to the integrated micro piezoresistive accelerometer for high-g application with amplifying circuit. 2004-01-01.

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