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	TDDB characteristics of ultra-thin HfN/HfO2 gate stack
	Yang, H ; Sa, N ; Tang, L ; Liu, XY ; Kang, JF ; Han, RQ ; Yu, HY ; Ren, C ; Li, MF ; Chan, DSH ; Kwong, DL
	2004
英文摘要	In this paper, the area and electric field dependence of time dependent dielectric breakdown (TDDB) for the Ultra thin HfN/HfO2 gate stack (EOT similar to 0.9nm) under negative constant voltage stress (CVS) was studied. Area scaling consistent with Weibull statistics as in SiO2 was observed in the HtN/HfO2 gate stack, demonstrating that intrinsic effects dominate TDDB characteristics of the ultra thin HtN/HfO2, gate stack. A new model on the mechanism of electric-field dependent TDDB was proposed. In this model, the reliability of HfN/HfO2, gate stack is dominated by the breakdown of HfO2, bulk layer Under high electric field stressing and by the breakdown Of the interfacial layer (IL) under low electric field stressing, respectively.; Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Physics, Condensed Matter; CPCI-S(ISTP); 0
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/293747]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Yang, H,Sa, N,Tang, L,et al. TDDB characteristics of ultra-thin HfN/HfO2 gate stack. 2004-01-01.

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