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	Proximity effect in electron beam lithography
	Ren, LM ; Chen, BQ
	2004
英文摘要	Proximity effect is the most severe factor that influences the expo sure resolution of electron beam. In this paper.. the mechanism of proximity effect is discussed through Monte Carlo Simulation of the electron scattering processes. And effective approaches of proximity effect correction are proposed. The theoretical results of Monte Carlo simulation and experimental results show that proximity effect is determined by many factors. In addition to the shape, size and packing density, of patterns, proximity effect is also dependent on processes conditions. Only on the basis of optimizing the processes conditions and mask design, the expectant purpose of proximity effect correction by software can be achieved. Proximity effect is effectively reduced through improving mask design, optimizing processes conditions and utilizing, proximity effect correction software.; Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Physics, Condensed Matter; CPCI-S(ISTP); 0
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/293743]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Ren, LM,Chen, BQ. Proximity effect in electron beam lithography. 2004-01-01.

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