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	A complete surface potential-based core model for the undoped symmetric double-gate MOSFETs
	He, Jin ; Zhang, Lining ; Zhang, Jian ; Zheng, Rui ; Fu, Yue ; Chan, Mansun
	2007
关键词	non-classical CMOS DG-MOSFET device physics surface potential-based model DRAIN-CURRENT
英文摘要	In this paper a complete surface potential-based core model for the undoped symmetric double-gate MOSFETs is derived from a fully self-consistent coupling between the surface potential versus voltage equation from Poisson equation solution and the drain current expression from Pao-Sah's double integral The model consists of a single set of the surface potential equation and the analytic drain current in terms of the surface potential evaluated at the source and drain ends. The presented model is verified by extensive comparison with the 2-D numerical simulation for different operation regions and geometry parameters, demonstrating the model accuracy and prediction capability.; Engineering, Electrical & Electronic; CPCI-S(ISTP); 0
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/293322]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	He, Jin,Zhang, Lining,Zhang, Jian,et al. A complete surface potential-based core model for the undoped symmetric double-gate MOSFETs. 2007-01-01.

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