A Monte Carlo Study of Ambipolar Schottky Barrier MOSFETs | |
Zeng, Lang ; Liu, Xiao Yan ; Du, Gang ; Kang, Jin Feng ; Han, Ru Qi | |
2009 | |
关键词 | Ambipolar Monte Carlo Schottky Barrier WKB FIELD-EFFECT TRANSISTORS SIMULATION |
英文摘要 | In this paper, we demonstrate a Monte Carlo simulator for ambipolar Schottky barrier MOSFETs which includes tunneling and thermal emission of electrons and holes and the appropriate treatment of carrier transport at nano-scale. The ambipolar characteristic of SB MOSFETs is reproduced by this simulator. The four operation modes in both n and p SB MOSFETs are revealed. Based on these simulations, it is summarized that the tunneling at source side dominates the carrier transport.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000272988200075&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Computer Science, Theory & Methods; Engineering, Electrical & Electronic; CPCI-S(ISTP); 0 |
语种 | 英语 |
内容类型 | 其他 |
源URL | [http://ir.pku.edu.cn/handle/20.500.11897/293245] ![]() |
专题 | 信息科学技术学院 |
推荐引用方式 GB/T 7714 | Zeng, Lang,Liu, Xiao Yan,Du, Gang,et al. A Monte Carlo Study of Ambipolar Schottky Barrier MOSFETs. 2009-01-01. |
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