QQ客服 官方微博 反馈留言

	A Monte Carlo Study of Ambipolar Schottky Barrier MOSFETs
	Zeng, Lang ; Liu, Xiao Yan ; Du, Gang ; Kang, Jin Feng ; Han, Ru Qi
	2009
关键词	Ambipolar Monte Carlo Schottky Barrier WKB FIELD-EFFECT TRANSISTORS SIMULATION
英文摘要	In this paper, we demonstrate a Monte Carlo simulator for ambipolar Schottky barrier MOSFETs which includes tunneling and thermal emission of electrons and holes and the appropriate treatment of carrier transport at nano-scale. The ambipolar characteristic of SB MOSFETs is reproduced by this simulator. The four operation modes in both n and p SB MOSFETs are revealed. Based on these simulations, it is summarized that the tunneling at source side dominates the carrier transport.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000272988200075&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Computer Science, Theory & Methods; Engineering, Electrical & Electronic; CPCI-S(ISTP); 0
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/293245]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Zeng, Lang,Liu, Xiao Yan,Du, Gang,et al. A Monte Carlo Study of Ambipolar Schottky Barrier MOSFETs. 2009-01-01.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。