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	CHARACTERIZATION OF GAN CANTILEVERS FABRICATED WITH GAN-ON-SILICON PLATFORM
	Lv, J. N. ; Yang, Z. C. ; Yan, G. Z. ; Cai, Y. ; Zhang, B. S. ; Chen, K. J.
	2011
英文摘要	In this article, Gallium nitride (GaN) cantilevers integrated with AlGaN/GaN high electron mobility transistors (HEMTs) are fabricated with a GaN-on-silicon platform, which is fully compatible with the standard HEMTs fabrication process. A type of micro-bending test was used to characterize the piezoresponse of AlGaN/GaN HEMT on the GaN cantilever. The modulation capability of the AlGaN/GaN heterostructures under different gate bias voltages for either high sensitivity or large output signals was demonstrated. A pulsed vibration measurement technique was used to evaluate the Young's modulus of the suspended GaN cantilevers, yielding a Young's modulus of similar to 293 GPa.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000295841200096&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; CPCI-S(ISTP); 0
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/293110]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Lv, J. N.,Yang, Z. C.,Yan, G. Z.,et al. CHARACTERIZATION OF GAN CANTILEVERS FABRICATED WITH GAN-ON-SILICON PLATFORM. 2011-01-01.

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