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	A Novel High Programming Efficiency and Highly Scalable Flash Memory Cell Based on Tunneling FET (TFET)
	Qin, Shiqiang ; Tang, Poren ; Cai, Yimao ; Huang, Qianqian ; Tang, Yu ; Huang, Ru
	2011
英文摘要	A novel flash memory cell based on Tunneling Field Effect Transistor (TFET) is proposed and investigated in this paper. Based on the TFET structure, the proposed novel flash memory cell shows high programming efficiency, low power consumption, and good punch-through immunity. Unlike traditional NOR Flash cell which adopts the channel hot carrier (CHE) injection near drain side for programming operation, the TFET flash memory cell utilizes hot electrons injection introduced by band-to-band tunneling near source side for programming, which can achieve 3 orders higher programming efficiency due to greatly alleviated competition between the vertical electric field and lateral electric field. Moreover, the programming leakage current is 2 orders lower due to the high punch-through immunity for TFET structure. Our results show that the programming leakage current of TFET flash memory can be tolerably low while the gate length continues scaling down, although flash cell has relatively stringent requirements for leakage current. The obtained results and theoretical analysis demonstrate that the newly proposed flash cell can be a potential candidate for low power, and high density NOR-type flash applications.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000300456600002&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Electrochemistry; Engineering, Electrical & Electronic; EI; CPCI-S(ISTP); 2
语种	英语
DOI标识	10.1149/1.3567552
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/293088]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Qin, Shiqiang,Tang, Poren,Cai, Yimao,et al. A Novel High Programming Efficiency and Highly Scalable Flash Memory Cell Based on Tunneling FET (TFET). 2011-01-01.

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