QQ客服 官方微博 反馈留言

	High Performance Reactive Sputtering Deposited ZnO Thin-Film Transistors on Transparent Substrate
	Li, Shaojuan ; Han, Dedong ; Sun, Lei ; Wang, Yi ; Han, Quqi ; Zhang, Shengdong
	2011
关键词	reactive RF sputtering thin-film transistors ZnO film
英文摘要	We present the construction and characteristics of high-performance ZnO thin-film transistors (TFTs) on the glass substrate. The ZnO films were deposited as channel layers under oxygen rich ambience by reactive sputtering at room temperature. Typical transfer characteristics of the ZnO TFTs with different channel thicknesses were demonstrated and analyzed. Results show that the threshold voltage exhibited obvious negative shift with the increase of the channel thickness. The sub-threshold swing and off-state current were improved for the case of thinner active channel layer.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000304037500168&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; Physics, Applied; EI; CPCI-S(ISTP); 0
语种	英语
DOI标识	10.1109/EDSSC.2011.6117749
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/292913]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Li, Shaojuan,Han, Dedong,Sun, Lei,et al. High Performance Reactive Sputtering Deposited ZnO Thin-Film Transistors on Transparent Substrate. 2011-01-01.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。