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	Characterization of AlGaN/GaN Cantilevers Fabricated with Deep-Release Techniques
	Lv, Jianan ; Yang, Zhenchuan ; Yan, Guizhen ; Cai, Yong ; Zhang, Baoshun ; Chen, Kevin J.
	2011
关键词	Gallium nitride cantilevers MEMS bending test GAN DEVICES
英文摘要	In this article, integrated AlGaN/GaN cantilevers on (111) silicon substrate are fabricated and characterized. The process started with AlGaN/GaN HEMTs fabrication followed by a series of dry-etch-only MEMS process. To characterize the residual stress distribution, Micro-Raman spectroscopy is used and the residual stress in suspended GaN cantilever is found similar to 90% lower after releasing. A type of micro-bending test is used to characterize the piezoresponse of AlGaN/GaN HEMT on the GaN cantilever. An output current modulation greater than 20% can be observed when the cantilever is vertically downward deflected similar to 30 mu m.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000308677000003&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; EI; CPCI-S(ISTP); 0
语种	英语
DOI标识	10.4028/www.scientific.net/KEM.483.14
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/292891]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Lv, Jianan,Yang, Zhenchuan,Yan, Guizhen,et al. Characterization of AlGaN/GaN Cantilevers Fabricated with Deep-Release Techniques. 2011-01-01.

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