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	Low-temperature Fabrication of Fully Transparent IGZO Thin Film Transistors on Glass Substrate
	Tian, Yu ; Han, Dedong ; Cai, Jian ; Geng, Youfeng ; Wang, Wei ; Wang, Liangliang ; Zhang, Shengdong ; Wang, Yi
	2012
关键词	IGZO TFTs O-2:Ar ratio Fully-transparent low temperature process
英文摘要	We fabricate fully transparent indium gallium zinc oxide thin film transistors (a-IGZO TFTs) on glass substrates at relatively low temperature. The sputtering process used are all carried out at room temperature, and SiO2 PECVD (Plasma Enhanced Chemical Vapor Deposition) run at 80, which is highest temperature we use in this fabrication. And while sputtering IGZO layer we change the O-2 flux in order to study the effect of oxygen content on performance of IGZO TFT, and to find out the optimum condition for TFTs' fabrication. We find that TFTs fabricated with flux ratio of oxygen and argon (O-2:Ar ratio) of 3: 97 demonstrate the best transfer curves with highest on-to-off current ratio (I-on/off) of 1.69x10(8) and a high on current of 2.71mA, and its output characteristic is also very good. In addition, we find that difference between on-current measured at different V-ds, 0.5V and 5V, respectively, became small while amount of O-2 increased during IGZO deposition.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000318549000063&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; CPCI-S(ISTP); 0
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/292791]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Tian, Yu,Han, Dedong,Cai, Jian,et al. Low-temperature Fabrication of Fully Transparent IGZO Thin Film Transistors on Glass Substrate. 2012-01-01.

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