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	Performance Improvement of Si Pocket-Tunnel FET with Steep Subthreshold Slope and High I-ON/I-OFF Ratio
	Huang, Qianqian ; Huang, Ru ; Zhan, Zhan ; Wu, Lei ; Qiu, Yingxin ; Wang, Yangyuan
	2012
英文摘要	In this paper, we have experimentally demonstrated an all-Si Pocket-Tunnel FET (Pocket-TFET) with steep subthreshold slope (SS) of 52mV/dec and high I-ON/T-OFF ratio of 3.9x10(6) based on the bulk silicon substrate by CMOS compatible process. It is the best experimental performance in the published silicon-based TFETs with a fully-depleted doping pocket layer at the source/channel interface. Compared with traditional TFET, through changing the drain layout, the extremely abrupt tunnel junction can be well achieved with the source pocket, resulting in the superior SS and ION. In addition, the ambipolar effect can be also greatly reduced in the fabricated Pocket-TFET.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000319824700317&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; Physics, Applied; CPCI-S(ISTP); 0
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/292721]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Huang, Qianqian,Huang, Ru,Zhan, Zhan,et al. Performance Improvement of Si Pocket-Tunnel FET with Steep Subthreshold Slope and High I-ON/I-OFF Ratio. 2012-01-01.

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