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	Formation of NiSiGe on Compressivly Strained SiGe Thin Layers
	Du, Xiong-Xiong ; Sun, Lei ; Wang, Yi ; Knoll, Lars ; Mussler, Gregor ; Hollaeder, Bernd ; Mantl, Siegfried ; Zhao, QingTai
	2012
英文摘要	In this work, we studied the nickel germano-silicide formation on thin SiGe layers epitaxially-grown on silicon substrate. Single crystal NiSiGe film with a thickness of 5.5nm was formed at 400 degrees C and showed a low specific resistance of 30u Omega cm. A thicker NiSiGe layer resulted from a thicker Ni showed poly-crystalline structure with rough surface and interface. We also found Ge and Ni diffuse simultaneously to the silicon substrate during germane-silicidation, causing degradation of the NiSiGe layers.; Engineering, Electrical & Electronic; Physics, Applied; EI; CPCI-S(ISTP); 0
语种	英语
DOI标识	10.1109/ICSICT.2012.6467868
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/292720]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Du, Xiong-Xiong,Sun, Lei,Wang, Yi,et al. Formation of NiSiGe on Compressivly Strained SiGe Thin Layers. 2012-01-01.

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