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	High-Gate-Injection Tunneling Field Effect Transistor for Flash Memory Applications
	Wu, Huiwei ; Qin, Shiqiang ; Cai, Yimao ; Huang, Qianqian ; Huang, Ru
	2012
关键词	HOT-ELECTRON
英文摘要	In this paper, a tunneling filed effect transistor (TFET) based flash memory with high-gate injection efficiency is proposed and experimentally demonstrated. The measured injection efficiency (gate current (I-g) / drain current (I-d)) during programming is more than 10(-4) in TFET flash devices which is two orders higher than that of the conventional ones. It is considered that this high injection efficiency is attributed to the strong channel electric field near source region. The results imply that this TFET flash device is promising for low power operation.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000319824700260&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; Physics, Applied; EI; CPCI-S(ISTP); 0
语种	英语
DOI标识	10.1109/ICSICT.2012.6466678
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/292715]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Wu, Huiwei,Qin, Shiqiang,Cai, Yimao,et al. High-Gate-Injection Tunneling Field Effect Transistor for Flash Memory Applications. 2012-01-01.

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