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	Stability of Zinc Oxide Thin-Film Transistors
	Li, Shao-juan ; Sun, Lei ; Han, De-dong ; Wang, Yi ; Han, Ru-qi ; Zhang, Sheng-dong
	2012
英文摘要	In this paper, the construction and stability of thin-film transistors (TFTs) with ZnO as active layer are investigated. The bottom-gated ZnO TFTs exhibit n-channel enhancement mode behavior, including an on/off current ratio of 2.4x10(7), a low off-current value in the order of 10(-12) A, a field effect mobility of 1.8cm(2)/V.s. The threshold voltage shift in positive direction with increasing the channel length is clearly observed. The application of positive and negative bias stress results in the device transfer characteristics shifting in positive and negative direction. The stressed devices show a logarithmic time-dependent threshold voltage shift and recover to near-original characteristic without any annealing.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000325403600008&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Electrochemistry; Engineering, Electrical & Electronic; Physics, Applied; EI; CPCI-S(ISTP); 0
语种	英语
DOI标识	10.1149/1.3694296
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/292679]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Li, Shao-juan,Sun, Lei,Han, De-dong,et al. Stability of Zinc Oxide Thin-Film Transistors. 2012-01-01.

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