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	High-Performance Fully Transparent Ga-doped ZnO TFTs Fabricated by RF Magnetron Sputtering
	Zhang, Suoming ; Tian, Yu ; Han, Dedong ; Shan, Dongfang ; Huang, Fuqing ; Wang, Shuyang ; Zhang, Xing ; Zhang, Shengdong ; Wang, Yi
	2013
英文摘要	We report on the fabrication of fully transparent Ga-doped ZnO TFTs on glass. The device shows excellent performance which on-off ratio, V-t, SS, field effect mobility is 4x10(9), 3.2v, 235mV/decade, 370cm(2)/v.s, respectively. The performance is significantly improved by annealing treatment, with much steeper SS of 107mV/decade and much lower V-t of 0.7v.; Engineering, Electrical & Electronic; EI; CPCI-S(ISTP); 0
语种	英语
DOI标识	10.1109/VLSI-TSA.2013.6545630
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/292592]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Zhang, Suoming,Tian, Yu,Han, Dedong,et al. High-Performance Fully Transparent Ga-doped ZnO TFTs Fabricated by RF Magnetron Sputtering. 2013-01-01.

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