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	Research on the structure of ultrathin Si PIN detector
	Wang, Peiquan ; Tian, Dayu ; Wang, Shaonan ; Yu, Min ; Jin, Yufeng
	2013
关键词	PIN detector simulation reverse current
英文摘要	Ultrathin PIN Detectors have been applied in radiation detection for particle identification and etc. In this paper, we present simulation research on the structure of ultrathin Si PIN detector based on bonding technology by using Sentaurus TCAD tool. The normal structure and reverse structure of ultrathin Si PIN detector are simulated and compared. The reverse current of detector and electrical field distribution are analyzed. It is found that the reverse current of the reverse structure increases fast when the voltage exceeds a threshold value. It is explained by considering the parasitic MOS structure. This effect can be reduced by increasing the thickness of buried SiO2.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000327183000131&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Biomedical; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; EI; CPCI-S(ISTP); 0
语种	英语
DOI标识	10.1109/NEMS.2013.6559808
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/292569]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Wang, Peiquan,Tian, Dayu,Wang, Shaonan,et al. Research on the structure of ultrathin Si PIN detector. 2013-01-01.

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