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	Investigations of Silicon Wafer Bonding Using Thin Al and Sn Films for Heterogeneous Integration
	Zhu, Zhiyuan ; Wang, Shaonan ; Xu, Yichao ; Wang, Guanjiang ; Pi, Yudan ; Wang, Peiquan ; Zhu, Yunhui ; Sun, Xin ; Yu, Min ; Chen, Jing ; Miao, Min ; Jin, Yufeng
	2013
关键词	Wafer bonding heterogeneous integration Al Sn MEMS DEVICES
英文摘要	Metallic wafer bonding has emerged as a key technology for microelectronics and MEMS. The Si wafers with Al metallization film on surface are bonded by applying Sn film as intermediate layer, aiming at the application of heterogeneous integration. Averaged shear strength of 9.9 MPa is realized at bonding temperature as low as 280 degrees C with bonding time as short as 3 minutes under the bonding pressure of 0.25 MPa. Interface microstructure and fracture surface analysis were carried out to understand the underlying mechanism.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000327183000026&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Biomedical; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; EI; CPCI-S(ISTP); 0
语种	英语
DOI标识	10.1109/NEMS.2013.6559703
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/292558]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Zhu, Zhiyuan,Wang, Shaonan,Xu, Yichao,et al. Investigations of Silicon Wafer Bonding Using Thin Al and Sn Films for Heterogeneous Integration. 2013-01-01.

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