QQ客服 官方微博 反馈留言

	Fabrication Optimization to Improve Performance of Gallium-doped Zinc Oxide Thin Film Transistors
	Zhang, Suoming ; Han, Dedong ; Wang, Shuyang ; Tian, Yu ; Shan, Dongfang ; Huang, Fuqing ; Cong, Yingying ; Zhang, Shengdong ; Zhang, Xing ; Wang, Yi
	2013
英文摘要	We reported the bottom gate type fully transparent Ga-doped ZnO TFTs fabricated on glass substrate at room temperature. The effect of O-2/Ar ratio during channel layer deposition on the electrical properties of the device was investigated. The results showed that the TFTs fabricated at O-2/Ar ratio of 25/75 exhibited the best characteristic with the saturation mobility of 14.15cm(2)/V.s, the subthreshold swing (SS) of 422mV/dec, the threshold voltage (V-t) of 4.9V and the on/off current ratio of 2x10(7). Futhermore, the effect of post-annealing temperature was studied, too. It turned out the properties of TFTs were improved after post-annealing, and which reached the best after 250 degrees C post-annealing, with the saturation mobility of 262.49 cm(2)/V.s, the subthreshold swing of 138mV/dec, the threshold voltage of 3V and the on/off current ratio of 2x10(9).; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000335778400032&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; EI; CPCI-S(ISTP); 0
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/292507]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Zhang, Suoming,Han, Dedong,Wang, Shuyang,et al. Fabrication Optimization to Improve Performance of Gallium-doped Zinc Oxide Thin Film Transistors. 2013-01-01.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。