A continuous analytic I-V model for long-channel undoped ultra-thin-body   silicon-on-insulator (UTB-SOI) MOSFETs from a carrier-based approach

doi:10.1088/0268-1242/21/3/008

CORC > 北京大学 > 信息科学技术学院

	A continuous analytic I-V model for long-channel undoped ultra-thin-body silicon-on-insulator (UTB-SOI) MOSFETs from a carrier-based approach
	He, J ; Chan, MS ; Zhang, GG ; Zhang, X ; Wang, YY
刊名	semiconductor science and technology
	2006
关键词	ELECTRON-MOBILITY PERFORMANCE DESIGN CMOS TRANSISTORS TECHNOLOGY DEVICE GATE
DOI	10.1088/0268-1242/21/3/008
英文摘要	This paper presents for the first time a continuous analytic I-V model for long-channel undoped (lightly doped) ultra-thin-body silicon-on-insulator (UTB-SOI) MOSFETs from a carrier-based approach. It is based oil the solution of the Poisson-Boltzmann equation and the Current continuity equation of the Pao-Sah current formulation in terms of the mobile carrier concentration under art appropriate boundary approximation. The model is continuous and valid for all the operation regions (linear, saturation and sub-threshold) and traces the transitions between them. This preliminary model has been verified by comparison with long-channel results generated by a two-dimensional simulator. The predicted I-V characteristics also show a good agreement with two-dimensional numerical simulations for all ranges of gate and drain voltages, proving the validity of the analytical model. All these indicate that this model will be an ideal core model for UTB MOSFET modelling if the appropriate second-order effects Such as the quantum-mechanical effect, doping-profile effect, short-channel effect and poly-depletion effect are integrated into it.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000236590100010&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Physics, Condensed Matter; SCI(E); EI; 14; ARTICLE; 3; 261-266; 21
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/292162]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	He, J,Chan, MS,Zhang, GG,et al. A continuous analytic I-V model for long-channel undoped ultra-thin-body silicon-on-insulator (UTB-SOI) MOSFETs from a carrier-based approach[J]. semiconductor science and technology,2006.
APA	He, J,Chan, MS,Zhang, GG,Zhang, X,&Wang, YY.(2006).A continuous analytic I-V model for long-channel undoped ultra-thin-body silicon-on-insulator (UTB-SOI) MOSFETs from a carrier-based approach.semiconductor science and technology.
MLA	He, J,et al."A continuous analytic I-V model for long-channel undoped ultra-thin-body silicon-on-insulator (UTB-SOI) MOSFETs from a carrier-based approach".semiconductor science and technology (2006).