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	Monte Carlo simulation of band-to-band tunneling in silicon devices
	Xia, Zhiliang ; Du, Gang ; Song, Yuncheng ; Wang, Jian ; Liu, Xiaoyan ; Kang, Jinfeng ; Han, Ruqi
	2007
关键词	Monte Carlo band-to-band tunneling gate-induced-drain-leakage INDUCED DRAIN LEAKAGE N-MOSFETS SEMICONDUCTORS CHARGE MODEL
英文摘要	A band-to-band tunneling model including trap-assisted tunneling has been implemented in our ensemble full band Monte Carlo simulator. Four kinds of hand-to-hand tunneling mechanisms are taken into account. All the parameters in the band-to-band tunneling model are verified by comparing the pn junction reverse current with the experimental data. Then, gate- induced-drain-leakage currents caused by hand-to-hand tunneling in a 45 nm gate length n-metal-oxide-semiconductor field-effect-transistor are investigated. Results indicate that band-to-band tunneling can cause additional hot holes which becomes an important issue for the device reliability. Moreover, The gate-induced-drain-leakage currents caused by band-to-band tunneling in parallel with Si/SiO2 interface and normal to Si/SiO2 interface are compared. The influence of drain voltage on the two components of the gate-induced-drain-leakage currents is considered.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000247050200040&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Physics, Applied; SCI(E); EI; CPCI-S(ISTP); 3
语种	英语
DOI标识	10.1143/JJAP.46.2023
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/292151]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Xia, Zhiliang,Du, Gang,Song, Yuncheng,et al. Monte Carlo simulation of band-to-band tunneling in silicon devices. 2007-01-01.

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