Source/drain series resistances of nanoscale ultra-thin-body SOI MOSFETs   with undoped or very-low-doped channel regions

doi:10.1088/0268-1242/21/10/008

CORC > 北京大学 > 信息科学技术学院

	Source/drain series resistances of nanoscale ultra-thin-body SOI MOSFETs with undoped or very-low-doped channel regions
	Ke, Wei ; Han, Xu ; Xu, Bojuan ; Liu, Xiaoyan ; Wang, Xinan ; Zhang, Tianyi ; Han, Ruqi ; Zhang, Shengdong
刊名	semiconductor science and technology
	2006
DOI	10.1088/0268-1242/21/10/008
英文摘要	The source/drain (S/D) series resistance of nanoscale ultra-thin-body (UTB) SOI MOSFETs with elevated S/D structure and undoped or very-low-doped channel regions is studied with a device simulator. The dependences of the series resistance and its components on the device geometry/process parameters are quantitatively investigated. It is shown that the S/D contact resistivity, S/D extension length and S/D doping profile are the major factors determining the series resistance. A number of guidelines for designing nanoscale UTB devices are suggested on the basis of the simulated results. Moreover, it is implied that the conventional S/D doping approach, namely gate-S/D overlap doping, is very unlikely to be competent for sub-50 nm technology applications because it results in an unacceptably large series resistance and poor short-channel performance. A new S/D doping scheme called gate to S/D underlap doping is proposed and studied. Results indicate that the new doping approach can help with scaling UTB devices into 18 nm technology node and below.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000242578100008&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Physics, Condensed Matter; SCI(E); EI; 5; ARTICLE; 10; 1416-1421; 21
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/292141]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Ke, Wei,Han, Xu,Xu, Bojuan,et al. Source/drain series resistances of nanoscale ultra-thin-body SOI MOSFETs with undoped or very-low-doped channel regions[J]. semiconductor science and technology,2006.
APA	Ke, Wei.,Han, Xu.,Xu, Bojuan.,Liu, Xiaoyan.,Wang, Xinan.,...&Zhang, Shengdong.(2006).Source/drain series resistances of nanoscale ultra-thin-body SOI MOSFETs with undoped or very-low-doped channel regions.semiconductor science and technology.
MLA	Ke, Wei,et al."Source/drain series resistances of nanoscale ultra-thin-body SOI MOSFETs with undoped or very-low-doped channel regions".semiconductor science and technology (2006).