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	Tuning Schottky Barrier Height in Metal/n-Type Germanium by Inserting an Ultrathin Yttrium Oxide Film
	Li, Zhiqiang ; An, Xia ; Yun, Quanxin ; Lin, Meng ; Zhang, Xing ; Huang, Ru
	2012
DOI	10.1149/2.001204ssl
英文摘要	An ultrathin yttrium oxide (Y2O3) film is introduced at the metal/n-Ge interface for modulating the Schottky barrier height. The experimental results show that the thin Y2O3 film can effectively alleviate the Fermi level pinning and electron Schottky barrier height is successfully modulated. With inserting 1nm Y2O3 layer, the reverse current of Titanium (Ti)/n-Ge Schottky diodes increases by nearly two orders of magnitude and electron Schottky barrier height drops from 0.53 eV to 0.37 eV. The thickness dependence of metal/Y2O3/n-Ge on Y2O3 interfacial layer is also demonstrated. This method is hopeful for reducing the source/drain resistance and promoting Ge n-MOSFETs performance. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.001204ssl] All rights reserved.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000318340300006&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Materials Science, Multidisciplinary; Physics, Applied; SCI(E); EI; 5; ARTICLE; 4; Q33-Q34; 1
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/291855]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Li, Zhiqiang,An, Xia,Yun, Quanxin,et al. Tuning Schottky Barrier Height in Metal/n-Type Germanium by Inserting an Ultrathin Yttrium Oxide Film[J],2012.
APA	Li, Zhiqiang,An, Xia,Yun, Quanxin,Lin, Meng,Zhang, Xing,&Huang, Ru.(2012).Tuning Schottky Barrier Height in Metal/n-Type Germanium by Inserting an Ultrathin Yttrium Oxide Film..
MLA	Li, Zhiqiang,et al."Tuning Schottky Barrier Height in Metal/n-Type Germanium by Inserting an Ultrathin Yttrium Oxide Film".(2012).

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