Unified Reaction-Diffusion Model for Accurate Prediction of Negative   Bias Temperature Instability Effect

doi:10.1143/JJAP.51.02BC07

CORC > 北京大学 > 信息科学技术学院

	Unified Reaction-Diffusion Model for Accurate Prediction of Negative Bias Temperature Instability Effect
	Ma, Chenyue ; Mattausch, Hans Juergen ; Miyake, Masataka ; Matsuzawa, Kazuya ; Iizuka, Takahiro ; Yamaguchi, Seiichiro ; Hoshida, Teruhiko ; Kinoshita, Akinari ; Arakawa, Takahiko ; He, Jin ; Miura-Mattausch, Mitiko
刊名	日本应用物理学杂志
	2012
关键词	NBTI DEGRADATION TRAP GENERATION P-MOSFETS INTERFACE
DOI	10.1143/JJAP.51.02BC07
英文摘要	In this study, we developed a unified reaction-diffusion (R-D) model for the negative bias temperature instability (NBTI) effect over a wide range of stress times. The newly developed model provides a physics-based uniform solution and overcomes the limitations of the classical R-D models that cannot describe both the short and the long term stress regions simultaneously. In our modeling framework, the chemical reaction between inversion channel carriers and Si-H bonds at the Si/SiO2 interface dominates the short-term NBTI effects at the beginning of the stress application. Then the H-2 diffusion into the polycrystalline silicon (poly-Si) gate becomes responsible for long term stress degradation. Finally, the developed R-D model is implemented into the advanced metal oxide semiconductor field effect transistor (MOSFET) model HiSIM to enable accurate circuit-aging simulation. Simulation results for the current degradation and their comparison with measurements verify the achieved high accuracy and the practical applicability of the developed NBTI model. (C) 2012 The Japan Society of Applied Physics; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000303481400014&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Physics, Applied; SCI(E); EI; 6; ARTICLE; 2; 51
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/291853]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Ma, Chenyue,Mattausch, Hans Juergen,Miyake, Masataka,et al. Unified Reaction-Diffusion Model for Accurate Prediction of Negative Bias Temperature Instability Effect[J]. 日本应用物理学杂志,2012.
APA	Ma, Chenyue.,Mattausch, Hans Juergen.,Miyake, Masataka.,Matsuzawa, Kazuya.,Iizuka, Takahiro.,...&Miura-Mattausch, Mitiko.(2012).Unified Reaction-Diffusion Model for Accurate Prediction of Negative Bias Temperature Instability Effect.日本应用物理学杂志.
MLA	Ma, Chenyue,et al."Unified Reaction-Diffusion Model for Accurate Prediction of Negative Bias Temperature Instability Effect".日本应用物理学杂志 (2012).