High-performance full transparent tin-doped zinc oxide thin-film transistors fabricated on glass at low temperatures | |
Chen, Zhuofa ; Han, Dedong ; Zhao, Nannan ; Cong, Yingying ; Wu, Jing ; Huang, Lingling ; Dong, Junchen ; Zhao, Feilong ; Liu, Lifeng ; Zhang, Shengdong ; Zhang, Xing ; Wang, Yi | |
刊名 | electronics letters |
2014 | |
DOI | 10.1049/el.2014.2887 |
英文摘要 | High-performance full transparent bottom-gate type tin-doped zinc oxide thin-film transistors (TZO TFTs) had been successfully fabricated by RF magnetron sputtering on glass substrates at low temperatures. The effect of O-2/Ar gas flow ratio during channel deposition on the electrical properties of TZO TFTs was investigated and an optimised growing condition (O-2/Ar gas flow ratio: 8/92) for TZO film as the channel layer was acheived. Excellent device performance was obtained, with a low off-state current (I-off) of 10(-12) A, a high on/off current ratio of 5 x 10(7), a high saturation mobility (mu(s)) of 57 cm(2)/Vs, a steep subthreshold slope of 0.507 V/decade and a threshold voltage (V-th) of 3.5 V. These results highlight that excellent device performance can be realised in TZO film and TZO TFT is a promising candidate for transparent flat panel display.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000343237000034&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; SCI(E); EI; 1; ARTICLE; handedong@pku.edu.cn; 20; 1463-1464; 50 |
语种 | 英语 |
内容类型 | 期刊论文 |
源URL | [http://ir.pku.edu.cn/handle/20.500.11897/291532] |
专题 | 信息科学技术学院 |
推荐引用方式 GB/T 7714 | Chen, Zhuofa,Han, Dedong,Zhao, Nannan,et al. High-performance full transparent tin-doped zinc oxide thin-film transistors fabricated on glass at low temperatures[J]. electronics letters,2014. |
APA | Chen, Zhuofa.,Han, Dedong.,Zhao, Nannan.,Cong, Yingying.,Wu, Jing.,...&Wang, Yi.(2014).High-performance full transparent tin-doped zinc oxide thin-film transistors fabricated on glass at low temperatures.electronics letters. |
MLA | Chen, Zhuofa,et al."High-performance full transparent tin-doped zinc oxide thin-film transistors fabricated on glass at low temperatures".electronics letters (2014). |
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