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	Channel design of silicon-on-insulator (SOI) MOSFET for low-voltage low-power application
	Yang, B ; Huang, R ; Zhang, X ; Wang, YY
	1998
英文摘要	Silicon-on-Insulator(SOI) technology compare with bulk circuit, an obvious improvement in power consumption and speed is always observed for the corresponding SOI circuit [1,2]. Due to their electrical properties [3,4], SOI devices may be a solution for low-power application. But FD devices PD devices have different properties. Detailed analysis and comparison between the different SOI devices operating at low voltage is extremely needed. In this paper, Medici 4.0 is used to study FD and PD devices. Different device parameters' influence on devices and circuits behavior is described.; Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Materials Science, Characterization & Testing; Materials Science, Coatings & Films; Optics; CPCI-S(ISTP); 0
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/291517]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Yang, B,Huang, R,Zhang, X,et al. Channel design of silicon-on-insulator (SOI) MOSFET for low-voltage low-power application. 1998-01-01.

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