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	Design Consideration for SOI gate controlled hybrid transistor operating at low voltage
	Huang, R ; Yang, B ; Zhang, X ; Wang, YY
	1998
英文摘要	The comprehensive design guidelines for SOI gate controlled hybrid transistor (GCHT) are provided in this paper for the first time, especially for GCHT operating at low voltage, which is an advantageous operating region of GCHT. The investigated mechanisms in this study involve in short channel effect, current driving capability, device off-characteristics and open-circuit voltage gain. The design curves for low operating voltage are presented by synthesizing the results, with tradeoffs between different parameter requirements for different effects illustrated explicitly. The allowable design region is greatly-broadened, pointing out the direction for deep submicron device development.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000080928800196&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Materials Science, Characterization & Testing; Materials Science, Coatings & Films; Optics; CPCI-S(ISTP); 0
语种	英语
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/291516]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Huang, R,Yang, B,Zhang, X,et al. Design Consideration for SOI gate controlled hybrid transistor operating at low voltage. 1998-01-01.

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