Carrier sheet density constrained anomalous current saturation of   graphene field effect transistors: kinks and negative differential   resistances

doi:10.1039/c3nr33940h

CORC > 北京大学 > 信息科学技术学院

	Carrier sheet density constrained anomalous current saturation of graphene field effect transistors: kinks and negative differential resistances
	Wang, Xiaomu ; Xu, Haitao ; Min, Jie ; Peng, Lian-Mao ; Xu, Jian-Bin
刊名	nanoscale
	2013
关键词	P-N-JUNCTION DEVICES GATES
DOI	10.1039/c3nr33940h
英文摘要	There has recently been a great deal of interest and excitement in applying graphene field effect transistors (GFETs) in digital and radio frequency (RF) circuits and systems. Peculiar output characteristics such as kinks and negative differential resistance (NDR) in a strong field are the unique transport properties of GFETs. Here we demonstrate that these unusual features are attributed to a carrier sheet density constrained transport framework. Simulation results based on a simple analytic model which includes the linear DOS structure are in very good agreement with experimental data. The kernel mechanism of NDR is ascribed to the fact that the total current increase of a channel with a high average carrier density is constrained by its minimum sheet density. Utilizing in situ Kelvin probe force microscopy (KPFM), the principle which naturally distinguishes NDR from kinks is further verified by studying the spatially resolved surface potential distribution along the channel. The influence and potential application of GFETs' unique output characteristics in the digital and RF fields are also proposed.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000316120100034&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Chemistry, Multidisciplinary; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied; SCI(E); EI; 6; ARTICLE; 7; 2811-2817; 5
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/290854]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Wang, Xiaomu,Xu, Haitao,Min, Jie,et al. Carrier sheet density constrained anomalous current saturation of graphene field effect transistors: kinks and negative differential resistances[J]. nanoscale,2013.
APA	Wang, Xiaomu,Xu, Haitao,Min, Jie,Peng, Lian-Mao,&Xu, Jian-Bin.(2013).Carrier sheet density constrained anomalous current saturation of graphene field effect transistors: kinks and negative differential resistances.nanoscale.
MLA	Wang, Xiaomu,et al."Carrier sheet density constrained anomalous current saturation of graphene field effect transistors: kinks and negative differential resistances".nanoscale (2013).