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	Study of polyimide as sacrificial layer with O2 plasma releasing for its application in MEMS capacitive FPA fabrication
	Shenglin, Ma ; Ying, Li ; Xin, Sun ; Xiaomei, Yu ; Yufeng, Jin
	2009
英文摘要	Polyimide (PI) was a good candidate as the sacrificial layer for its compatibility with CMOS technology. This paper first presented a new patterning method of PI film and then investigated the relationships among undercut rate, the undercut limit length and the releasing hole size in the releasing step, which was helpful and important for its popularity and its application in MEMS capacitive FPA (Focal plane array) fabrication. A new patterning approach of PI film was successfully developed in ICP chamber. The patterning approach selected a PECVD SiO2 layer as patterning mask. The optimized ICP PI recipe was composed of an O2 flow of 180sccm, an electrode power of 400W and bias plate power 200W. With the optimized ICP PI recipe, a vertical etching rate about 0.5-0.6??m/min with a lateral etching rate 0.13??m/min was realized. With 1??m PI sacrificial layer, a 0.22??m/min undercut rate was achieved in a normal barrel etcher. Based on our experimental facts, the optimized releasing hole size was 5??mx5??m and the distance between lateral releasing holes should be fewer than 17 ??m for effectively and completely releasing. ?2009 IEEE.; EI; 0
语种	英语
DOI标识	10.1109/ICEPT.2009.5270696
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/263211]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Shenglin, Ma,Ying, Li,Xin, Sun,et al. Study of polyimide as sacrificial layer with O2 plasma releasing for its application in MEMS capacitive FPA fabrication. 2009-01-01.

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