An electrostatic Si e-gun and a high temperature elemental B source for Si heteroepitaxial growth | |
Scarinci, F ; Casella, A ; Lagomarsino, S ; Fiordelisi, M ; Strappaveccia, P ; Gambacorti, N ; Grimaldi, MG ; Li, YX | |
1996 | |
英文摘要 | In this paper we present two kind of sources used in Si MBE growth: a Si source where an electron beam is electrostatically deflected onto a Si rod and a high temperature B source to be used for p-doping. Both sources have been designed and constructed at IESS. The Si source is constituted of a Si rod mounted on a 3/4 '' flange with high-voltage connector. A W filament held at high voltage (up to 2000 V) is heated by direct current. Electrons from the filament are electrostatically focused onto the Si rod which is grounded, This mounting allows a minimum heating dispersion and no contamination, because the only hot objects are the Si rod and the W filament which is mounted in such a way that it cannot see the substrate, Growth rates of 10 Angstrom/min on a substrate at 20 cm from the source have been measured. Auger and LEED have shown no contamination. The B source is constituted of a graphite block heated by direct current. A pyrolitic graphite crucible put in the graphite heater contains the elemental B, The cell is water cooled and contains Ta screens to avoid heat dispersion, It has been tested up to a temperature of 1700 degrees C. P-doped Si1-xCex layers have been grown and B concentration has been measured by SIMS, A good central and reproducibility has been attained.; Chemistry, Physical; Materials Science, Coatings & Films; Physics, Applied; Physics, Condensed Matter; SCI(E); 2 |
语种 | 英语 |
DOI标识 | 10.1016/0169-4332(96)00015-3 |
内容类型 | 其他 |
源URL | [http://ir.pku.edu.cn/handle/20.500.11897/258367] ![]() |
专题 | 信息科学技术学院 |
推荐引用方式 GB/T 7714 | Scarinci, F,Casella, A,Lagomarsino, S,et al. An electrostatic Si e-gun and a high temperature elemental B source for Si heteroepitaxial growth. 1996-01-01. |
个性服务 |
查看访问统计 |
相关权益政策 |
暂无数据 |
收藏/分享 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论