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	Electrical properties of Al2O3 gate dielectrics
	Lin, CH ; Kang, JF ; Han, DD ; Tian, DY ; Wang, W ; Zhang, JH ; Liu, M ; Liu, XY ; Han, RQ
	2003
关键词	Al2O3 gate dielectric electrical properties carrier transport mechanism interfacial traps
英文摘要	Al2O3 gate dielectric thin films were deposited by reactive dc magnetron sputtering. The electrical properties and the carrier transport mechanisms were studied. The results indicate that higher temperature annealing in oxygen ambient is helpful to improve the electrical properties of Al2O3 gate dielectric films with few interfacial traps formed at the Al2O3 / Si interface and the carrier transport mechanisms are dominate by thermionic emission. (C) 2003 Published by Elsevier Science B.V.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000182725500123&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Optics; Physics, Applied; SCI(E); EI; CPCI-S(ISTP); 7
语种	英语
DOI标识	10.1016/S0167-9317(02)01007-9
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/256013]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Lin, CH,Kang, JF,Han, DD,et al. Electrical properties of Al2O3 gate dielectrics. 2003-01-01.

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