超薄栅氧化层n-MOSFET软击穿后的导电机制

doi:10.3321/j.issn:1000-3290.2005.08.072

CORC > 北京大学 > 信息科学技术学院

	超薄栅氧化层n-MOSFET软击穿后的导电机制; Conduction mechanism of ultra-thin gate oxide n-MOSFET after soft breakdown
	王彦刚 ; 许铭真 ; 谭长华 ; 段小蓉
刊名	物理学报
	2005
关键词	软击穿栅电流类Fowler-Nordheim隧穿超薄栅氧化层 soft breakdown gate current Fowler Nordheim-like tunneling ultra-thin gate oxide
DOI	10.3321/j.issn:1000-3290.2005.08.072
英文摘要	研究了恒压应力下超薄栅氧化层n型金属-氧化物-半导体场效应晶体管(n-MOSFET)软击穿后的导电机制.发现在一定的栅电压Vg范围内,软击穿后的栅电流Ig符合Fowler-Nordheim隧穿公式,但室温下隧穿势垒φb的平均值仅为0.936 eV,远小于Si/SiO2界面的势垒高度3.15 eV.研究表明,软击穿后,处于Si/SiO2界面量子化能级上的电,子不隧穿到氧化层的导带,而是隧穿到氧化层内的缺陷带上.φb与缺陷带能级和电子所处的量子能级相关;高温下,激发态电子对隧穿电流贡献的增大导致φb逐渐降低.; The conduction mechanism of ultra-thin gate oxide n-metal-oxide-semiconductor field effect transistor (n-MOSFET) after soft breakdown is studied in this paper. It is found that in a certain range of gate voltage V-g, the gate current I-g follows the Fowler-Nordheim-like tunneling mechanism, and the experimental tunneling barrier phi(b) is 0.936 eV in average, which is much smaller than the interface barrier of Si/SiO2. We think that after soft breakdown, the electrons existing in the quantization energy levels of the Si/SiO2 interface, not directly tunnel to the oxide conduction band, but tunnel to the oxide defect band. phi(b) is determined by both the defect band energy level and the quantization energy level of the tunneling electrons. With rising experimental temperature, the tunneling of high energy level electron is also increasing, which reduces phi(b) gradually.; 国家重点基础研究发展计划(973计划); SCI(E); EI; 中文核心期刊要目总览(PKU); 中国科技核心期刊(ISTIC); 中国科学引文数据库(CSCD); 5; 8; 3884-3888; 54
语种	中文
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/253135]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	王彦刚,许铭真,谭长华,等. 超薄栅氧化层n-MOSFET软击穿后的导电机制, Conduction mechanism of ultra-thin gate oxide n-MOSFET after soft breakdown[J]. 物理学报,2005.
APA	王彦刚,许铭真,谭长华,&段小蓉.(2005).超薄栅氧化层n-MOSFET软击穿后的导电机制.物理学报.
MLA	王彦刚,et al."超薄栅氧化层n-MOSFET软击穿后的导电机制".物理学报 (2005).