Schottky barrier formation at metal electrodes and semiconducting carbon   nanotubes

doi:10.1063/1.3093677

CORC > 北京大学 > 信息科学技术学院

	Schottky barrier formation at metal electrodes and semiconducting carbon nanotubes
	He, Yu ; Zhang, Jinyu ; Hou, Shimin ; Wang, Yan ; Yu, Zhiping
刊名	应用物理学快报
	2009
关键词	ab initio calculations aluminium carbon nanotubes field effect transistors nanotube devices palladium scandium Schottky barriers semiconductor materials semiconductor-metal boundaries work function FIELD-EFFECT TRANSISTORS ENERGY INTERFACE MODEL
DOI	10.1063/1.3093677
英文摘要	Schottky barrier (SB) formation at the contact interface between metal and semiconducting carbon nanotubes (CNTs) is of great importance in determining the transport characteristics of a CNT field effect transistor. In this paper, we studied the SB height (SBH) between different metals and CNT contacts using first-principles calculation. A method to calculate SBH is proposed based on the interface dipole effect, which will induce an electrical potential variation at the metal and CNT interface. The SBH of a metal and CNT contact could then be determined by the work function difference between the metal and CNT and the electrical potential variation. We extensively investigated different contacts between Sc, Al, Pd, (8,0) CNT, and (11,0) CNT. The calculated SBHs for these contacts are all in good agreement with experimental results.; Physics, Applied; SCI(E); EI; 18; ARTICLE; 9; 94
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/246438]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	He, Yu,Zhang, Jinyu,Hou, Shimin,et al. Schottky barrier formation at metal electrodes and semiconducting carbon nanotubes[J]. 应用物理学快报,2009.
APA	He, Yu,Zhang, Jinyu,Hou, Shimin,Wang, Yan,&Yu, Zhiping.(2009).Schottky barrier formation at metal electrodes and semiconducting carbon nanotubes.应用物理学快报.
MLA	He, Yu,et al."Schottky barrier formation at metal electrodes and semiconducting carbon nanotubes".应用物理学快报 (2009).