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	Current sustainability and electromigration of Pd, Sc and Y thin-films as potential interconnects
	Yang, Yong ; Xu, Shengyong ; Xie, Sishen ; Peng, Lian-Mao
刊名	nano micro letters
	2010
关键词	Carbon nanotube-based field effect transistors Carbon nanotube-based circuit Interconnects Current density Electromigration Resistivity
DOI	10.5101/nml.v2i3.p184-189
英文摘要	The progress on novel interconnects for carbon nanotube (CNT)-based electronic circuit is by far behind the remarkable development of CNT-field effect transistors. The Cu interconnect material used in current integrated circuits seems not applicable for the novel interconnects, as it requires electrochemical deposition followed by chemical-mechanical polishing. We report our experimental results on the failure current density, resistivity, electromigration effect and failure mechanism of patterned stripes of Pd, Sc and Y thin-films, regarding them as the potential novel interconnects. The Pd stripes have a failure current density of (8 similar to 10)x10(6) A/cm(2) (MA/cm(2)), and they are stable when the working current density is as much as 90% of the failure current density. However, they show a resistivity around 210 mu O.cm, which is 20 times of the bulk value and leaving room for improvement. Compared to Pd, the Sc stripes have a similar resistivity but smaller failure current density of 4 similar to 5 MA/cm(2). Y stripes seem not suitable for interconnects by showing even lower failure current density than that of Sc and evidence of oxidation. For comparison, Au stripes of the same dimensions show a failure current density of 30 MA/cm(2) and a resistivity around 4 mu O.cm, making them also a good material as novel interconnects.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000208414400008&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied; SCI(E); 2; ARTICLE; 3; 184-189; 2
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/244875]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Yang, Yong,Xu, Shengyong,Xie, Sishen,et al. Current sustainability and electromigration of Pd, Sc and Y thin-films as potential interconnects[J]. nano micro letters,2010.
APA	Yang, Yong,Xu, Shengyong,Xie, Sishen,&Peng, Lian-Mao.(2010).Current sustainability and electromigration of Pd, Sc and Y thin-films as potential interconnects.nano micro letters.
MLA	Yang, Yong,et al."Current sustainability and electromigration of Pd, Sc and Y thin-films as potential interconnects".nano micro letters (2010).

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