Large thermoelectric figure of merit in Si1-xGex nanowires | |
Shi, Lihong ; Yao, Donglai ; Zhang, Gang ; Li, Baowen | |
刊名 | 应用物理学快报
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2010 | |
关键词 | ab initio calculations Boltzmann equation electronic structure Ge-Si alloys nanowires thermoelectricity SILICON NANOWIRES TRANSPORT-PROPERTIES BAND-GAP OF-MERIT ALLOYS DENSITY |
DOI | 10.1063/1.3421543 |
英文摘要 | By using first-principles electronic structure calculation and Boltzmann transport equation, we investigate composition effects on the thermoelectric properties of silicon-germanium (Si1-xGex) nanowires (NWs). The power factor and figure of merit in n-type Si1-xGex wires are much larger than those in their p-type counterparts with the same Ge content and doping concentration. Moreover, the maximal obtainable figure of merit can be increased by a factor of 4.3 in n-type Si0.5Ge0.5 NWs, compared with the corresponding values in pure silicon nanowires (SiNWs). Given the fact that the measured ZT of n-type SiNW is 0.6 similar to 1.0, we expect ZT value of n-type Si1-xGex NWs to be 2.5 similar to 4.0.; Physics, Applied; SCI(E); EI; 26; ARTICLE; 17; 96 |
语种 | 英语 |
内容类型 | 期刊论文 |
源URL | [http://ir.pku.edu.cn/handle/20.500.11897/243873] ![]() |
专题 | 信息科学技术学院 |
推荐引用方式 GB/T 7714 | Shi, Lihong,Yao, Donglai,Zhang, Gang,et al. Large thermoelectric figure of merit in Si1-xGex nanowires[J]. 应用物理学快报,2010. |
APA | Shi, Lihong,Yao, Donglai,Zhang, Gang,&Li, Baowen.(2010).Large thermoelectric figure of merit in Si1-xGex nanowires.应用物理学快报. |
MLA | Shi, Lihong,et al."Large thermoelectric figure of merit in Si1-xGex nanowires".应用物理学快报 (2010). |
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