Large thermoelectric figure of merit in Si1-xGex nanowires

doi:10.1063/1.3421543

CORC > 北京大学 > 信息科学技术学院

	Large thermoelectric figure of merit in Si1-xGex nanowires
	Shi, Lihong ; Yao, Donglai ; Zhang, Gang ; Li, Baowen
刊名	应用物理学快报
	2010
关键词	ab initio calculations Boltzmann equation electronic structure Ge-Si alloys nanowires thermoelectricity SILICON NANOWIRES TRANSPORT-PROPERTIES BAND-GAP OF-MERIT ALLOYS DENSITY
DOI	10.1063/1.3421543
英文摘要	By using first-principles electronic structure calculation and Boltzmann transport equation, we investigate composition effects on the thermoelectric properties of silicon-germanium (Si1-xGex) nanowires (NWs). The power factor and figure of merit in n-type Si1-xGex wires are much larger than those in their p-type counterparts with the same Ge content and doping concentration. Moreover, the maximal obtainable figure of merit can be increased by a factor of 4.3 in n-type Si0.5Ge0.5 NWs, compared with the corresponding values in pure silicon nanowires (SiNWs). Given the fact that the measured ZT of n-type SiNW is 0.6 similar to 1.0, we expect ZT value of n-type Si1-xGex NWs to be 2.5 similar to 4.0.; Physics, Applied; SCI(E); EI; 26; ARTICLE; 17; 96
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/243873]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Shi, Lihong,Yao, Donglai,Zhang, Gang,et al. Large thermoelectric figure of merit in Si1-xGex nanowires[J]. 应用物理学快报,2010.
APA	Shi, Lihong,Yao, Donglai,Zhang, Gang,&Li, Baowen.(2010).Large thermoelectric figure of merit in Si1-xGex nanowires.应用物理学快报.
MLA	Shi, Lihong,et al."Large thermoelectric figure of merit in Si1-xGex nanowires".应用物理学快报 (2010).