InAs-mediated growth of vertical InSb nanowires on Si substrates

doi:10.1186/1556-276X-8-333

CORC > 北京大学 > 信息科学技术学院

	InAs-mediated growth of vertical InSb nanowires on Si substrates
	Li, Tianfeng ; Gao, Lizhen ; Lei, Wen ; Guo, Lijun ; Pan, Huayong ; Yang, Tao ; Chen, Yonghai ; Wang, Zhanguo
刊名	nanoscale research letters
	2013
关键词	Catalyst-free MOCVD InSb Nanowire Electron microscopy VAPOR-PHASE EPITAXY HETEROSTRUCTURES TEMPERATURE CATALYST
DOI	10.1186/1556-276X-8-333
英文摘要	In this work, InSb nanowires are grown vertically on Si (111) with metal organic chemical vapor deposition using InAs as seed layer, instead of external metal catalyst. Two groups of InSb nanowires are fabricated and characterized: one group presents Indium droplets at the nanowire's free end, while the other, in contrast, ends without Indium droplet but with pyramid-shaped InSb. The indium-droplet-ended nanowires are longer than the other group of nanowires. For both groups of InSb nanowires, InAs layers play an important role in their formation by serving as a template for growing InSb nanowires. The results presented in this work suggest a useful approach to grow catalyst-free InSb nanowires on Si substrates, which is significant for their device applications.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000322676000001&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied; SCI(E); EI; 7; ARTICLE; 1; 8
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/221744]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Li, Tianfeng,Gao, Lizhen,Lei, Wen,et al. InAs-mediated growth of vertical InSb nanowires on Si substrates[J]. nanoscale research letters,2013.
APA	Li, Tianfeng.,Gao, Lizhen.,Lei, Wen.,Guo, Lijun.,Pan, Huayong.,...&Wang, Zhanguo.(2013).InAs-mediated growth of vertical InSb nanowires on Si substrates.nanoscale research letters.
MLA	Li, Tianfeng,et al."InAs-mediated growth of vertical InSb nanowires on Si substrates".nanoscale research letters (2013).