QQ客服 官方微博 反馈留言

	Proportional difference operator method and its application in studying subthreshold behavior of MOSFETs
	Tan, CH ; Xu, MZ ; Wang, Z
刊名	固体电子学
	2000
关键词	RELAXATION SPECTROSCOPY THRESHOLD EXTRACTION MOS STRUCTURES TRAP
DOI	10.1016/S0038-1101(99)00318-4
英文摘要	The proportional difference operator (PDO) method is presented to study the subthreshold behavior of MOSFETs. By applying the PDO, acting on an expression for the drain current in the subthreshold region, a new proportional difference characteristic of MOSFET can be obtained. The analytical results show that the proportional difference of the subthreshold equation is a peak function. Its peak position, being dependent on the measurement voltage, is related to the characteristic parameters, so the most important parameters (such as thermal and threshold voltages) can be easily obtained. A surface potential approximation has been developed and implemented in studying a MOSFET's proportional difference subthreshold behaviors. The relationships between the classical threshold voltage and the Lindner threshold voltage are also discussed. Values of voltage constants are shown to agree well with those obtained by standard methods. (C) 2000 Elsevier Science Ltd. All rights reserved.; Engineering, Electrical & Electronic; Physics, Applied; Physics, Condensed Matter; SCI(E); 6; ARTICLE; 6; 1059-1067; 44
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/213616]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Tan, CH,Xu, MZ,Wang, Z. Proportional difference operator method and its application in studying subthreshold behavior of MOSFETs[J]. 固体电子学,2000.
APA	Tan, CH,Xu, MZ,&Wang, Z.(2000).Proportional difference operator method and its application in studying subthreshold behavior of MOSFETs.固体电子学.
MLA	Tan, CH,et al."Proportional difference operator method and its application in studying subthreshold behavior of MOSFETs".固体电子学 (2000).

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。