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Growth of Large-Area 2D MoS2(l_,)Se2, Semiconductor
Feng, Qingliang ; Zhu, Yiming ; Hong, Jinhua ; Zhang, Mei ; Duan, Wenjie ; Mao, Nannan ; Wu, Juanxia ; Xu, Hua ; Dong, Fengliang ; Lin, Fang ; Jin, Chuanhong ; Wang, Chunming ; Zhang, Jin ; Xie, Liming
刊名advanced materials
2014
关键词chemical vapor deposition two-dimensional materials semiconductor alloys tunable bandgaps electrical properties molybdenum MONOLAYER MOLYBDENUM-DISULFIDE METAL DICHALCOGENIDE ALLOYS CHEMICAL-VAPOR-DEPOSITION VALLEY POLARIZATION MOS2 TRANSISTORS GRAPHENE FILMS LAYERS PHOTOLUMINESCENCE CONTACTS QUALITY
DOI10.1002/adma.201306095
英文摘要Semiconducting MoS2(1-x)Se2x monolayers where x = 0-0.40 are successfully grown over large areas. A random arrangement of the S and Se atoms and a tunable bandgap photoluminescence are observed. Atomically thin, 2D semiconductor alloys with tunable bandgaps have potential applications in nano- and opto-electronics. Field-effect transistors fabricated with the monolayers exhibit high on/off ratios of >105. ? 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000335401100004&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Chemistry, Multidisciplinary; Chemistry, Physical; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter; SCI(E); EI; 63; ARTICLE; jinzhang@pku.edu.cn; xielm@nanoctr.cn; 17; 2648-2653; 26
语种英语
内容类型期刊论文
源URL[http://ir.pku.edu.cn/handle/20.500.11897/213076]  
专题信息科学技术学院
推荐引用方式
GB/T 7714
Feng, Qingliang,Zhu, Yiming,Hong, Jinhua,et al. Growth of Large-Area 2D MoS2(l_,)Se2, Semiconductor[J]. advanced materials,2014.
APA Feng, Qingliang.,Zhu, Yiming.,Hong, Jinhua.,Zhang, Mei.,Duan, Wenjie.,...&Xie, Liming.(2014).Growth of Large-Area 2D MoS2(l_,)Se2, Semiconductor.advanced materials.
MLA Feng, Qingliang,et al."Growth of Large-Area 2D MoS2(l_,)Se2, Semiconductor".advanced materials (2014).
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