Analytical model for silicon-on-insulator lateral high-voltage devices   using variation of lateral thickness technique

doi:10.7567/JJAP.54.024301

CORC > 北京大学 > 信息科学技术学院

	Analytical model for silicon-on-insulator lateral high-voltage devices using variation of lateral thickness technique
	Yao, Jiafei ; Guo, Yufeng ; Li, Man ; Huang, Xiaofeng ; Lin, Hong ; Ji, Xincun ; Xu, Yue
刊名	日本应用物理学杂志
	2015
关键词	FIELD DISTRIBUTION BREAKDOWN VOLTAGE RESURF LDMOS SOI LDMOS LAYER OPTIMIZATION
DOI	10.7567/JJAP.54.024301
英文摘要	Recently, the variation of lateral thickness (VLT) technique has been proposed as an effective lateral voltage-sustaining technology. However, no analytical model has been reported for exploring the physical mechanism quantitatively. By solving the two-dimensional (2D) Poisson equation, an analytical model for a silicon-on-insulator (SOI) device with a VLT structure is proposed in this paper to optimize the surface potential and electric field distribution of the VLT SOI device. The lateral and vertical breakdown voltages are formulized to quantify the breakdown characteristic. The drift doping concentration range is derived to maximize the breakdown voltage. This model is used to investigate the electric field distribution and breakdown voltage of the VLT SOI device with various parameters. The validity of the proposed model is verified by the fair agreement between the analytical and numerical results. (C) 2015 The Japan Society of Applied Physics; Physics, Applied; SCI(E); EI; 0; ARTICLE; yfguo@njupt.edu.cn; 2; 54
语种	英语
内容类型	期刊论文
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/206400]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Yao, Jiafei,Guo, Yufeng,Li, Man,et al. Analytical model for silicon-on-insulator lateral high-voltage devices using variation of lateral thickness technique[J]. 日本应用物理学杂志,2015.
APA	Yao, Jiafei.,Guo, Yufeng.,Li, Man.,Huang, Xiaofeng.,Lin, Hong.,...&Xu, Yue.(2015).Analytical model for silicon-on-insulator lateral high-voltage devices using variation of lateral thickness technique.日本应用物理学杂志.
MLA	Yao, Jiafei,et al."Analytical model for silicon-on-insulator lateral high-voltage devices using variation of lateral thickness technique".日本应用物理学杂志 (2015).