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Investigation on the layout strategy of ggNMOS ESD protection devices for uniform conduction behavior and optimal width scaling
Lu, Guang Yi ; Wang, Yuan ; Zhang, Li Zhong ; Cao, Jian ; Jia, Song ; Zhang, Xing
刊名science china information sciences
2015
DOI10.1007/s11432-014-5245-y
英文摘要Gate-grounded NMOS (ggNMOS) transistors have widely served as electro-static discharge (ESD) protection devices for integrated circuits. The layout strategy of ggNMOS greatly influences its ESD protection characteristics. Layout strategies forvariation of the number of substrate-pickup stripes are investigated in this paper. Direct current and transmission-line pulsing test results are presented to verify that adjustable holding voltages are accessed by variation of the number of substrate-pickup stripes. The design with two evenly distributed substrate-pickup stripes among different fingers is found to exhibit the highest second break current and optimal width-scaling characteristics. ? 2014, Science China Press and Springer-Verlag Berlin Heidelberg.; SCI(E); EI; 中国科学引文数据库(CSCD); 0; ARTICLE; wangyuan@pku.edu.cn; 4; 58
语种英语
内容类型期刊论文
源URL[http://ir.pku.edu.cn/handle/20.500.11897/153724]  
专题信息科学技术学院
推荐引用方式
GB/T 7714
Lu, Guang Yi,Wang, Yuan,Zhang, Li Zhong,et al. Investigation on the layout strategy of ggNMOS ESD protection devices for uniform conduction behavior and optimal width scaling[J]. science china information sciences,2015.
APA Lu, Guang Yi,Wang, Yuan,Zhang, Li Zhong,Cao, Jian,Jia, Song,&Zhang, Xing.(2015).Investigation on the layout strategy of ggNMOS ESD protection devices for uniform conduction behavior and optimal width scaling.science china information sciences.
MLA Lu, Guang Yi,et al."Investigation on the layout strategy of ggNMOS ESD protection devices for uniform conduction behavior and optimal width scaling".science china information sciences (2015).
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