Investigation on the layout strategy of ggNMOS ESD protection devices for uniform conduction behavior and optimal width scaling | |
Lu, Guang Yi ; Wang, Yuan ; Zhang, Li Zhong ; Cao, Jian ; Jia, Song ; Zhang, Xing | |
刊名 | science china information sciences
![]() |
2015 | |
DOI | 10.1007/s11432-014-5245-y |
英文摘要 | Gate-grounded NMOS (ggNMOS) transistors have widely served as electro-static discharge (ESD) protection devices for integrated circuits. The layout strategy of ggNMOS greatly influences its ESD protection characteristics. Layout strategies forvariation of the number of substrate-pickup stripes are investigated in this paper. Direct current and transmission-line pulsing test results are presented to verify that adjustable holding voltages are accessed by variation of the number of substrate-pickup stripes. The design with two evenly distributed substrate-pickup stripes among different fingers is found to exhibit the highest second break current and optimal width-scaling characteristics. ? 2014, Science China Press and Springer-Verlag Berlin Heidelberg.; SCI(E); EI; 中国科学引文数据库(CSCD); 0; ARTICLE; wangyuan@pku.edu.cn; 4; 58 |
语种 | 英语 |
内容类型 | 期刊论文 |
源URL | [http://ir.pku.edu.cn/handle/20.500.11897/153724] ![]() |
专题 | 信息科学技术学院 |
推荐引用方式 GB/T 7714 | Lu, Guang Yi,Wang, Yuan,Zhang, Li Zhong,et al. Investigation on the layout strategy of ggNMOS ESD protection devices for uniform conduction behavior and optimal width scaling[J]. science china information sciences,2015. |
APA | Lu, Guang Yi,Wang, Yuan,Zhang, Li Zhong,Cao, Jian,Jia, Song,&Zhang, Xing.(2015).Investigation on the layout strategy of ggNMOS ESD protection devices for uniform conduction behavior and optimal width scaling.science china information sciences. |
MLA | Lu, Guang Yi,et al."Investigation on the layout strategy of ggNMOS ESD protection devices for uniform conduction behavior and optimal width scaling".science china information sciences (2015). |
个性服务 |
查看访问统计 |
相关权益政策 |
暂无数据 |
收藏/分享 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论