Electron velocity saturation and probable cross-section area of leakage current path post soft breakdown (SBD) in ultrathin gate oxides | |
Xu, Ming-Zhen ; Tan, Chang-Hua | |
2007 | |
英文摘要 | The post soft breakdown (SBD) current saturation behavior was studied on the basis of electron velocity saturation concept by using the Proportional Difference Operator (PDO) method. It is shown that the proportional difference peak height and position of the post soft breakdown I-V curves are related to the saturation current density and the saturation velocity of electron in SBD path, respectively. The probable cross-section size of post SBD leakage current path in SiO2 is studied based on the defect scattering mechanism also. ? 2006 IEEE.; EI; 0 |
语种 | 英语 |
DOI标识 | 10.1109/ICSICT.2006.306700 |
内容类型 | 其他 |
源URL | [http://ir.pku.edu.cn/handle/20.500.11897/153717] ![]() |
专题 | 信息科学技术学院 |
推荐引用方式 GB/T 7714 | Xu, Ming-Zhen,Tan, Chang-Hua. Electron velocity saturation and probable cross-section area of leakage current path post soft breakdown (SBD) in ultrathin gate oxides. 2007-01-01. |
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