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	Reversible resistive switching of Gd-doped TiO2 thin films for nonvolatile memory applications
	Liu, L.F. ; Tang, H. ; Wang, Y. ; Wang, W. ; Tian, D.Y. ; Liu, X.Y. ; Zhang, X. ; Han, R.Q. ; Kang, J.F.
	2007
英文摘要	Gd doped TiO2 polycrystalline thin film was prepared on Pt/Ti/SiO2/Si substrates by sol-gel method. Nonvolatile and reversible bistable resistance states were demonstrated for the first time. Excellent reversible resistive switching characteristics with 0.6??0.1V reset bias and 2.0??0.1V set bias and a resistance difference by over three orders of magnitude were achieved in 3%Gd doped TiO2 polycrystalline thin films. ? 2006 IEEE.; EI; 0
语种	英语
DOI标识	10.1109/ICSICT.2006.306522
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/153709]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Liu, L.F.,Tang, H.,Wang, Y.,et al. Reversible resistive switching of Gd-doped TiO2 thin films for nonvolatile memory applications. 2007-01-01.

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