Reversible resistive switching of Gd-doped TiO2 thin films for nonvolatile memory applications | |
Liu, L.F. ; Tang, H. ; Wang, Y. ; Wang, W. ; Tian, D.Y. ; Liu, X.Y. ; Zhang, X. ; Han, R.Q. ; Kang, J.F. | |
2007 | |
英文摘要 | Gd doped TiO2 polycrystalline thin film was prepared on Pt/Ti/SiO2/Si substrates by sol-gel method. Nonvolatile and reversible bistable resistance states were demonstrated for the first time. Excellent reversible resistive switching characteristics with 0.6??0.1V reset bias and 2.0??0.1V set bias and a resistance difference by over three orders of magnitude were achieved in 3%Gd doped TiO2 polycrystalline thin films. ? 2006 IEEE.; EI; 0 |
语种 | 英语 |
DOI标识 | 10.1109/ICSICT.2006.306522 |
内容类型 | 其他 |
源URL | [http://ir.pku.edu.cn/handle/20.500.11897/153709] ![]() |
专题 | 信息科学技术学院 |
推荐引用方式 GB/T 7714 | Liu, L.F.,Tang, H.,Wang, Y.,et al. Reversible resistive switching of Gd-doped TiO2 thin films for nonvolatile memory applications. 2007-01-01. |
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