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	Simulation on advanced shallow junction technology with atomistic method
	Yu, Min ; Yuan, Li ; Sui, Yi ; Zhan, Kai ; Huang, Ru ; Zhang, Xing ; Wang, Yangyuan ; Oka, Hideki
	2007
英文摘要	New technologies such as cluster or molecular ion implantation and flash lamp annealing (FLA) seem to be applied as advanced shallow junction technologies. In this paper, the Molecular Dynamics (MD) model based simulation on B10H114 and B18H22 implantation is performed. The spike annealing of cluster implantation is simulated by atomistic model. The inactivation and clustering of B implanted at 0.5keV and annealed at 900??C-1200??C are correctly simulated by atomistic model. The simulation on activation ratio of B in FLA is presented. The discussion on cluster evolution in annealing is performed. ? 2006 IEEE.; EI; 0
语种	英语
DOI标识	10.1109/ICSICT.2006.306202
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/153706]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Yu, Min,Yuan, Li,Sui, Yi,et al. Simulation on advanced shallow junction technology with atomistic method. 2007-01-01.

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