Evaluating the effects of physical mechanisms on the program, erase and retention in the charge trapping memory | |
Song, Y.C. ; Liu, X.Y. ; Wang, Z.Y. ; Zhao, K. ; Du, G. ; Kang, J.F. ; Han, R.Q. ; Xia, Z.L. ; Kim, D. ; Lee, K.-H. | |
2008 | |
英文摘要 | In this work, a new efficient simulation method with comprehensive physical models is developed to evaluate the performance of CTM at various biases, temperatures, and gate stack configurations. The dominant physical mechanisms on the P/EIR operations of CTM are clarified. ?2008 IEEE.; EI; 2 |
语种 | 英语 |
DOI标识 | 10.1109/SISPAD.2008.4648232 |
内容类型 | 其他 |
源URL | [http://ir.pku.edu.cn/handle/20.500.11897/153676] ![]() |
专题 | 信息科学技术学院 |
推荐引用方式 GB/T 7714 | Song, Y.C.,Liu, X.Y.,Wang, Z.Y.,et al. Evaluating the effects of physical mechanisms on the program, erase and retention in the charge trapping memory. 2008-01-01. |
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