QQ客服 官方微博 反馈留言

	Evaluating the effects of physical mechanisms on the program, erase and retention in the charge trapping memory
	Song, Y.C. ; Liu, X.Y. ; Wang, Z.Y. ; Zhao, K. ; Du, G. ; Kang, J.F. ; Han, R.Q. ; Xia, Z.L. ; Kim, D. ; Lee, K.-H.
	2008
英文摘要	In this work, a new efficient simulation method with comprehensive physical models is developed to evaluate the performance of CTM at various biases, temperatures, and gate stack configurations. The dominant physical mechanisms on the P/EIR operations of CTM are clarified. ?2008 IEEE.; EI; 2
语种	英语
DOI标识	10.1109/SISPAD.2008.4648232
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/153676]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Song, Y.C.,Liu, X.Y.,Wang, Z.Y.,et al. Evaluating the effects of physical mechanisms on the program, erase and retention in the charge trapping memory. 2008-01-01.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。