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	Epitaxial growth of CeO2(100) films on Si(100) substrates by dual ion beams reactive sputtering
	Kang, F ; Xiong, GC ; Lian, GJ ; Wang, YY ; Han, RQ
	1998
关键词	PULSED LASER DEPOSITION ULTRAHIGH-VACUUM CEO2 LAYERS SILICON
英文摘要	The epitaxial growth of CeO2(100) films on (100) silicon substrates by dual ion beams sputtering has been studied. The measurements of X-ray theta-2 theta pattern, phi-scan, and rocking curve indicated that the CeO2 films had good epitaxial characteristics with (100) orientation, The influences of the substrate temperature, the oxygen pressure, and amorphous SiO2 layer of the Si sustrate surface on the epitaxial growth of CeO2 layer were investigated.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000080928800221&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; Materials Science, Multidisciplinary; Materials Science, Characterization & Testing; Materials Science, Coatings & Films; Optics; CPCI-S(ISTP); 0
语种	英语
DOI标识	10.1109/ICSICT.1998.786190
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/153523]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Kang, F,Xiong, GC,Lian, GJ,et al. Epitaxial growth of CeO2(100) films on Si(100) substrates by dual ion beams reactive sputtering. 1998-01-01.

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