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	Experimental Study on Quasi-Ballistic Transport in Silicon Nanowire Transistors and the Impact of Self-Heating Effects
	Wang, Runsheng ; Zhuge, Jing ; Liu, Changze ; Huang, Ru ; Kim, D.W. ; Park, Donggun ; Wang, Yangyuan
	2008
英文摘要	The ballistic efficiency and self-heating effects in gate-all-around silicon nanowire transistors (SNWTs) are experimentally investigated in this paper. A modified experimental extraction method for SNWTs is proposed, which takes into account the impact of source contact resistance. The highest ballistic efficiency is observed in sub-40nm SNWTs at room temperature, demonstrating their intrinsic potential for near-ballistic transport. However, it is experimentally found that, even if the SNWT is fabricated on bulk-Si substrate, the self-heating effect is comparable or even a little bit worse than SOI devices due to the I-D nature of nanowire and increased phonon-boundary scattering- in GAA structure. Considering heat transport and heating corrections at the drain side, the Lundstrom model is modified, and the impacts of self-heating on quasi-ballistic SNWTs are discussed as well.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000265829300175&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; Physics, Applied; EI; CPCI-S(ISTP); 12
语种	英语
DOI标识	10.1109/IEDM.2008.4796806
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/153508]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Wang, Runsheng,Zhuge, Jing,Liu, Changze,et al. Experimental Study on Quasi-Ballistic Transport in Silicon Nanowire Transistors and the Impact of Self-Heating Effects. 2008-01-01.

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