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	An Experimental Study on Carrier Transport in Silicon Nanowire Transistors: How Close to the Ballistic Limit?
	Wang, Runsheng ; Jing Zhuge ; Huang, Ru ; Zhang, Liangliang ; Kim, Dong-Won ; Zhang, Xing ; Park, Donggun ; Wang, Yangyuan
	2008
英文摘要	In this paper, experimental studies on the carrier transport in silicon nanowire transistors (SNWTs) are reported, demonstrating their great potential as an alternative device structure for near-ballistic transport from top-down approach. Both ballistic efficiency and apparent mobility were characterized. A modified experimental extraction methodology for SNWTs is proposed, which takes into account the impact of quantum contact resistance. The highest ballistic efficiency is observed in sub-40nm n-channel SNWTs due to their quasi-ID carrier transport. The apparent mobility is also extracted in comparison with the ballistic limit, which indicates that the gate-all-around SNWT can really be considered as a promising device architecture in close proximity to the ballistic transport.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000265971000013&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; Physics, Applied; EI; CPCI-S(ISTP); 0
语种	英语
DOI标识	10.1109/ICSICT.2008.4734473
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/153425]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Wang, Runsheng,Jing Zhuge,Huang, Ru,et al. An Experimental Study on Carrier Transport in Silicon Nanowire Transistors: How Close to the Ballistic Limit?. 2008-01-01.

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