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	A curvature compensated CMOS bandgap voltage reference for high precision applications
	Chen, Jianghua ; Ni, Xuewen ; Mo, Bangxian
	2007
关键词	CMOS analog integrated circuits bandgap reference low temperature coefficient high order curvature compensation
英文摘要	This paper describes a high precision high order curvature compensated bandgap voltage reference in a 0.5-mu m 2P3M n-well mixed signal CMOS technology. This newly proposed bandgap voltage reference utilizes a Buck's voltage transfer cell and a temperature independent current, to provide a high order compensation of the V-BE. Cascode structures are also introduced in this bandgap voltage reference to improve the power supply rejection ratio (PSRR). This circuit achieves 5.6 ppm/degrees C of temperature coefficient with temperature ranging from -20 to 100 degrees C at 5V power supply. The variation in the output voltage of the bandgap voltage reference is 0.4mV when V-DD varies from 4V to 6V.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000253449900124&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Electrical & Electronic; EI; CPCI-S(ISTP); 1
语种	英语
DOI标识	10.1109/ICASIC.2007.4415679
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/153386]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Chen, Jianghua,Ni, Xuewen,Mo, Bangxian. A curvature compensated CMOS bandgap voltage reference for high precision applications. 2007-01-01.

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