QQ客服 官方微博 反馈留言

	New self-aligned silicon nanowire transistors on bulk substrate fabricated by epi-free compatible CMOS technology: Process integration, experimental characterization of carrier transport and low frequency noise
	Tian, Yu ; Huang, Ru ; Wang, Yiqun ; Zhuge, Jing ; Wang, Runsheng ; Liu, Jia ; Zhang, Xing ; Wang, Yangyuan
	2007
英文摘要	A new method to fabricate self-aligned silicon nanowire transistors (SNWTs) has been realized on bulk silicon substrate by fully epi-free compatible CMOS technology The SNWTs exhibit excellent immunity of short-channel effects (SCEs) and achieve high I(on)/I(off) ratio of 2.6x10(8). The transportation characteristics, ballistic efficiency and low frequency noise of SNWTs are investigated for the first time.; http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000259347800205&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=8e1609b174ce4e31116a60747a720701 ; Engineering, Multidisciplinary; Engineering, Electrical & Electronic; EI; CPCI-S(ISTP); 64
语种	英语
DOI标识	10.1109/IEDM.2007.4419094
内容类型	其他
源URL	[http://ir.pku.edu.cn/handle/20.500.11897/153367]
专题	信息科学技术学院
推荐引用方式 GB/T 7714	Tian, Yu,Huang, Ru,Wang, Yiqun,et al. New self-aligned silicon nanowire transistors on bulk substrate fabricated by epi-free compatible CMOS technology: Process integration, experimental characterization of carrier transport and low frequency noise. 2007-01-01.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。